Incredible Read/Write Performance
Enhanced Endurance và Reliability 2.5" form Factor Ideal for most current Laptops và Desktop PCs
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Learn more about the SAMSUNG MZ-75E500B/AM
| SAMSUNG |
| 850 EVO |
| MZ-75E500B/AM |
| Internal Solid State Drive (SSD) |
| Consumer |
| 2.5" |
| 500GB |
| 32 layer 3d V-NAND |
| SATA III |
| Samsung MGX Controller |
| 512MB Low power DDR3 SDRAM |
| Up to 540 MBps |
| Up to 520 MBps |
| Random Read (4KB, QD32): Up lớn 98,000 IOPSRandom Read (4KB, QD1): Up lớn 10,000 IOPS |
| Random Write (4KB, QD32): Up to 90,000 IOPSRandom Write (4KB, QD1): Up khổng lồ 40,000 IOPS |
| 2,000,000 hours |
| Upgrade virtually every aspect of your computer's performance with Samsung's new 850 EVO, designed with state-of-the-art SSD advancements including 3 chiều V-NAND technology. As the next generation beyond the bestselling 840 EVO, you'll get the 850 EVO's new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work & play faster & longer than ever before. |
| 50 m W |
| Average: 3.0W Maximum: 3.5W (Burst mode) |
| 0°C ~ +70°C |
| 6.86mm |
| 69.85mm |
| 100.08mm |
| May 04, 2023 |
Samsung 850 EVO MZ-75E500B/AM Internal Solid State Drive (SSD), 2.5" size Factor, 500GB Capacity, SATA III (6Gb/s) Interface, Samsung MGX Controller, Samsung 32 layer 3 chiều V-NAND NAND Flash Memory, 1.5 million hours MTBF.
Samsung 850 EVO
What is 3d V-NAND và how does it differ from existing technology?
Samsung"s unique and innovative 3 chiều V-NAND flash memory architecture is a breakthrough in overcoming the mật độ trùng lặp từ khóa limitations, performance and endurance of today"s conventional planar NAND architecture. 3d V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions và trying lớn fit itself onto a fixed horizontal space resulting in higher density & better performance utilizing a smaller footprint.
Optimize daily computing with Turbo
Write công nghệ for unrivalled read/write speeds
Achieve the ultimate read/write performance khổng lồ maximize your everyday computing experience with Samsung’s Turbo
Write technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the đứng top of its class performance in sequential read (540MB/s) và write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.
* PCmark7(250GB) : 6700(840 EVO) > 7600(850 EVO)
** Random Write(QD32,120GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO)
Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system cấp độ by utilizing unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to lớn up khổng lồ 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
* PCMARK7 RAW(250GB) : 7500 > 15000(Rapid mode)
Guaranteed endurance và reliability bolstered by 3d V-NAND technology
The 850 EVO delivers guaranteed endurance & reliability by doubling the TBW* compared khổng lồ the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimized performance degradation allows sustained performance improvements of up lớn 30% over the 840 EVO proving khổng lồ be one of the most dependable storage devices***.
* TBW : Total Bytes Written** TBW : 43(840 EVO) > 75(850 EVO 120/250GB), 150(850 EVO 500/1TB)*** Sustained Performance(250GB) : 3300 IOPS(840 EVO) > 6500 IOPS(850 EVO), Performance measured after 12 hours "Random Write" test
Compute longer with improved energy efficiency backed by 3d V-NAND
The 850 EVO delivers significantly longer battery life on your notebook with a controller optimized for 3d V-NAND now enabling Device Sleep at a highly efficient 2m
W. The 850 EVO is now 25% more power nguồn efficient lớn the 840 EVO during write operations* thanks to 3d V-NAND only consuming half the energy than that of Planar 2 chiều NAND.
* Power(250GB) : 3.2 Watt(840 EVO) > 2.4 Watt(850 EVO)
Secure valuable data through advanced AES 256 encryption
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.
Protect against overheating with a highly responsive Dynamic Thermal Guard
The 850 EVO’s Dynamic Thermal Guard constantly monitors & maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to lớn ensure your computer is always safe from overheating.
Level up to lớn the 850 EVO simply without any hassle
In three simple steps the Samsung’s One-stop Install Navigator software easily allows you to lớn migrate all the data and applications from the existing primary storage to lớn the 850 EVO. The Samsung Magician software also allows you to lớn optimize and manage your system best suited for your SSD.
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Acquire an integrated in-house solution consisting of top-quality components
Samsung is the only SSD brand to lớn design & manufacture all its components in-house allowing complete optimized integration. The result – enhanced performance, lower nguồn consumption with an up to lớn 1 GB LPDDR2 DRAM cache memory & improved energy-efficiency with the MEX/MGX controller.
3D V-NAND
Current and Future Data Demands
Worldwide data transferal continues khổng lồ grow at an explosive rate. The amount of data being shared by average users on a daily basis is at an all-time high:
Twitter: 100,000 new tweets per minute
You
Tube: 30 hours of đoạn clip uploaded per minuteflickr: 3,000 photos uploaded per minutefoursquare: over 2,000 check-ins per minute
Even semiconductor and memory chip development địa chỉ cửa hàng to this increase in data sharing. Currently, these fields trương mục for the transferal of approximately 4 Exabytes of data per month. However, that number is projected to increase to lớn 10 Exabytes per month in 2016. Improvements must be made lớn existing memory to rise to lớn the challenge of such rapid data growth.
Benefits of Samsung V-NAND over 2 chiều Planar NAND
More speed
More endurance
More nguồn efficiency
Samsung"s new 3d V-NAND will be used for a wide range of consumer electronics and enterprise applications, including solid state drives (SSDs). Consumers can expect their handheld computers to perform better for longer periods of time between charges. Datacenter managers can expect increased productivity and longevity while saving on their nguồn bill.
Structural Changes Lead lớn Samsung V-NAND Memory
Over the past 15 years, NAND Flash memory cell structure has gone from 120nm scale to 19nm scale. Along with this drastically shrinking structure, capacity has grown by 100 times. Just how is Samsung V-NAND Flash memory able khổng lồ offer 100 times the capacity in only 1/10th the same area? That"s where the V in V-NAND comes in, as Samsung stacks the cells vertically.
Samsung"s three-dimensional Vertical NAND Flash memory (3D V-NAND) breaks không tính phí of the scaling limit for existing NAND Flash technology. Samsung has developed a new structure through its first 24-layer V-NAND.
Problems with Shrinking Technology
Shrinking is a fundamental technological advancement in almost any field, but it gains significant importance in memory engineering. As memory structures shrink, so vị the multitude of điện thoại devices people worldwide use on a daily basis. Samsung has committed considerable resources và effort toward researching và developing shrinking advancements while also working to lớn mitigate the two biggest problems inherent in shrinking technology.
Cell-to-Cell Interference
When an electric charge flows into one cell, an electric charge flows into a neighboring cell (known as the coupling effect). This extraneous charge to the neighboring cell actually changes the stored data, resulting in corruption of that data. This interference does not occur when the space between cells is greater than 30nm, but as that space shrinks smaller than 20nm, the chance for cell-to-cell interference increases.
Patterning
Patterning is a manufacturing giải pháp công nghệ developed for photolithography to enhance density. The patterning process allows for geometries half as wide as the scanner is capable of printing, but it has its limits within the 10nm process range.
Overcoming Inherent Shrinking Problems
Samsung has developed and applied a variety of technologies to prevent both data-corrupting interference & the limits of patterning. 3 chiều V-NAND replaces 2d Planar NAND"s conductor with an insulator that allows cells khổng lồ hold their charges after writing data. Due khổng lồ its vertical cell arrangement, Samsung"s 3 chiều V-NAND features a wider bit line, effectively removing cell-to-cell interference.
Stacking the vertical layers in three dimensions allowed for 24-layer products in 2013 and has increased to 32-layer products in June of 2014. Using stacking instead of photolithography to lớn increase capacity eliminated the patterning limitation.
